Extreme Low-Power Mixed Signal IC Design: Subthreshold by Armin Tajalli

By Armin Tajalli

Design exibility and tool intake as well as the price, have consistently been an important matters in layout of built-in circuits (ICs), and are the most issues of this study, in addition. strength Consumptions: energy dissipation (P ) and effort intake are - diss pecially importantwhen there's a restricted amountof energy budgetor restricted resource of strength. quite common examples are transportable structures the place the battery lifestyles time is determined by method energy intake. many alternative innovations were - veloped to minimize or deal with the circuit energy intake during this kind of platforms. Ultra-low energy (ULP) purposes are one other examples the place strength dissipation is the first layout factor. In such functions, the ability price range is so constrained that very specified circuit and process point layout techniquesare had to fulfill the necessities. Circuits hired in purposes resembling instant sensor networks (WSN), wearable battery powered platforms [1], and implantable circuits for biol- ical functions have to devour very low quantity of strength such that the full method can continue to exist for a long time with out the necessity for changingor recharging battery[2–4]. utilizing newpowersupplytechniquessuchas energyharvesting[5]and printable batteries [6], is one more reason for lowering energy dissipation. Devel- ing targeted layout recommendations for imposing low strength circuits [7–9], in addition to dynamic strength administration (DPM) schemes [10] are the 2 major methods to manage the approach energy intake. layout Flexibility: layout exibility is the opposite very important factor in smooth in- grated systems.

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Extra resources for Extreme Low-Power Mixed Signal IC Design: Subthreshold Source-Coupled Circuits

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This technique is also helpful to reduce the leakage or static power consumption of conventional CMOS circuit topologies implemented in modern nano-scale technologies. , static power dissipation and variability, will be reviewed. In more advanced deep-submicron MOS technologies, these two problems are more pronounced. Therefore, if not necessary, generally older technologies can be used for implementing energy-constrained circuits that does not require a high performance, such as in RFIDs, bio-implants, and sensor network.

18 2 Subthreshold MOS for Ultra-Low Power W and Le are the effective channel width and length of the device, VP is device pinch off voltage. 1) is called forward channel current, IF , and the second term is called reverse channel current, IR . Also, specific current of the device is defined as: IS D 2n e Cox UT2 . 1), it is necessary to calculate the values of VP and n. The pinch off voltage depends on the gate voltage (VG ) as: r VP D VG VT 0 VG p VT 0 C ‰0 C Á2 2 p ‰0 C ! Nch =ni / is the substrate Fermi potential, and ni stands for the intrinsic carrier concentration of Si6 .

We would also like to appreciate all the people who have helped us accomplish this work. Special thanks goes to St´ephane Badel for his very valuable help during physical design of test chips; Milos Stanisavljevic, Michele Mercaldi, and Bertrand Rey for their contribution in design of multiplier circuit; Mohammad Beikahmadi for design of ADC encoder and standard cell libraries; Nikola Katic for behavioral modeling of † modulator; and Sylvain Hauser who provided the test setups for prototype measurements.

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