Handbook of Semiconductor Technology.. Electronic Structure by Kenneth A. Jackson, Wolfgang Schroter

By Kenneth A. Jackson, Wolfgang Schroter

Jackson K.A., Schroter W. (eds.) guide of Semiconductor Technology.. digital constitution and houses of Semiconductors (Wiley-Vch, 2000)(ISBN 3527298347)(O)(861s)

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Additional info for Handbook of Semiconductor Technology.. Electronic Structure and Properties of Semiconductors (Wiley-Vch, 2000)(ISBN 3527298347)(O)(861s)

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Note that for this to occur the crossing point at G’+G k=-must lie within the first Bril2 louin zone or at its boundaries. For points where several branches cross, one will have a higher order matrix to diagonalize but this will generally also result in the formation of gaps. This explains the differences between the free electron band structure and the actual one in Fig. 1-10. z) k Figure 1-11. Opening of a gap in the nearly free electron method. The full line corresponds to the two free electron branches, the dashed lines to the two branches split by the potential Fourier component.

This last feature shows a tendency towards a planar sp2 hybridization. Several calculations have been devoted to the isolated dangling bond. However, only two of them have dealt with the tricoordinated silicon atom embedded in an infinite system other than a Bethe lattice. 5 eV. , 1986). 7 eV. 65 eV, which is in good agreement with the local density result. Both values correspond to a dangling bond in a bulk system and can be understood simply in the following way: the purely intra-atomic Coulomb term is about 12 eV for a Si atom: it is first reduced by a factor of 2 since the dangling bond state is only localized at 70% on the trivalent atom; finally, dielectric screening reduces it by a further factor of E = 10.

However, as shown by the determination of their radial distribution function, these systems still possess a well-defined short range order similar to what is observed in the crystalline phases. In this section we examine some features of non-crystalline semiconductors. We first consider some elemental amorphous systems like a-Si, a-As, and a-Se and examine possible modifications in the density of states. , the isolated dangling bond. Finally we make some comments on the electronic structure of more complex systems like Ge,rSel-, ...

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