By W. T. Tsang
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THE LIQUID-PHASE EPITAXIAL GROWTH OF InGaAsP 45 growth temperature is 650°C. 0410, and X i . 0028. The calculated results from Eq. 0 mm. (3) Layer Thicknessfor Dijiision-Limited Growth from a Semi-Infinite Solution. We calculated dXl,/dT by Eq. (28) and the phase-diagram calculation. , respectively. The result is shown in Fig. 34 over the temperature range 625-650°C. The labels (1)-(4) in Fig. 04 10, X i . 00 13 respectively. Figure 34 demonstrates that the temperature dependence of dX',/dT and m is not negligible.
Here, af and a: are the lattice constants of the epitaxial lattice perpendicular and parallel to the wafer surface, respectively, and a, is the lattice constant of the substrate. The lattice constant differences A d and A d are defined as af - a, and a: - a,, respectively. The above-mentioned Aa, which is obtained from Fig. 14, represents A d . , 1979) and InGaAs (Kawamura and Okamoto, 1979)epitaxial layers on InP substrates was measured from rocking curves of the double-crystal x-ray diffraction technique.
1 1. 31. Variation of P atomic fraction X b in uniform solutions (1) and (2) of the In-GaAs-P system during cooling from 650 to 630°C. [From Nakajima et a/. (1982a). Copyright North-Holland Publ. 32. Composition variation of Inl-xGaxAsl-yP,, LPE layers grown from uniform solutions (1) and (2) during cooling from 650 to 630°C. [From Nakajima et a/. (1982a). Copyright North-Holland Publ. 1 44 KAZUO NAKAJIMA quaternary epitaxial layer, as shown in Fig. 8. Labels (1) and (2) in Fig. 32 mean the same as in Figs.