Long-Wavelength Infrared Semiconductor Lasers by D. R. Vij(eds.)

By D. R. Vij(eds.)

Long-wavelength Infrared Semiconductor Lasers offers a accomplished overview of the present prestige of semiconductor coherent assets emitting within the mid-to far-infrared spectrum and their functions. It comprises 3 issues no longer lined in any past booklet: far-infrared emission from photo-mixers in addition to from hot-hole lasers, and InP-based lasers emitting past micrometers. Semiconductor lasers emitting at greater than micrometers have many functions resembling in hint fuel research, environmental tracking, and business procedure regulate. due to very quick development in recent times, until eventually this booklet no accomplished info past scattered magazine articles is on the market at present.Content:
Chapter 1 Coherent Semiconductor assets within the Long?Wavelength Infrared Spectrum (pages 1–17): Hong okay. Choi
Chapter 2 2?µm Wavelength Lasers applying InP?based Strained?Layer Quantum Wells (pages 19–68): Manabu Mitsuhara and Mamoru Oishi
Chapter three Antimonide Mid?IR Lasers (pages 69–143): Linda J. Olafsen, I. Vurgaftman and J. R. Meyer
Chapter four Lead?Chalcogenide?based Mid?Infrared Diode Lasers (pages 145–216): Uwe Peter Schie?L, Joachim John and Patrick J. McCann
Chapter five InP and GaAs?Based Quantum Cascade Lasers (pages 217–278): Jerome Faist and Carlo Sirtori
Chapter 6 commonly Tunable Far?Infrared Hot?Hole Semiconductor Lasers (pages 279–350): Erik Brundermann
Chapter 7 non-stop THz new release with Optical Heterodyning (pages 351–386): John C. Pearson, okay. A. McIntosh and S. Verghese

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The critical layer thickness is obtained by the condition that the sum of the elastic strain areal energy density and the areal energy corresponding to a grid of misfit dislocation is minimized. 67 . 8 shows the critical layer thicknesses for InGaAs on InP calculated using Eqs. 27). According to the mechanical equilibrium model, Eq. 7% strain. The critical layer thicknesses calculated using the mechanical equilibrium model and the energy balance model differ by as much as a factor of two. The experimentally determined critical layer thickness for 32 2-mm WAVELENGTH LASERS EMPLOYING InP-BASED STRAINED-LAYER Fig.

8% is considered to be suitable for the 2-mm wavelength MQW laser. 65% is chosen for the well layer. The barrier height of the MQW laser has strong influence on emission wavelength as well as other device characteristics. A small barrier height is DESIGN CONSIDERATION OF MQW ACTIVE REGION 37 Fig. 12 Calculated radiative, Auger, and threshold current densities for strainedInGaAs MQW lasers as a function of strain in InGaAs well. (From Loehr et al. [86]. ) effective in increasing the emission wavelength of a QW laser, but the potential energy is insufficient to prevent electron overflow from the wells.

Phys. Lett. 73, 2757 (1998). 50. L. A. Reichhertz, O. D. Dubon, G. Sirmain, E. Bruendermann, W. L. Hansen, D. R. Chamberlin, A. M. Linhart, H. P. Rosser, and E. E. Haller, “Stimulated far-infrared emission from combined cyclotron resonances in germanium,” Phys. Rev. B56, 12069 (1997). 51. E. Bruendermann and H. P. Roser, “First operation of a far-infrared p-germanium laser in a standard closed-cycle machine at 15 K,” Infrared Phys. Technol. 38, 201 (1997). 52. E. R. Brown, F. W. Smith, and K. A.

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