Quantum Processes in Semiconductors by Brian K. Ridley

By Brian K. Ridley

This e-book provides the basic quantum methods interested by the physics and know-how of semiconductors. Its particularly casual sort makes it a fantastic advent for graduate classes in addition to a competent reference for researchers within the box.

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As Heine and Van Vechten (1976) have pointed out, all of these effects can conveniently be taken into account by relating to a single parameter, namely the change in frequency of the phonons, following the original discussion of Brooks (1955). The statistical mechanics of the problem is as follows. The probability of an electron occupying a state s is given by the Fermi factor where Es is the Helmholtz free energy of the crystal when one electron occupies the state s and is given by Esi is the energy of the electron when it occupies the state s while the rest of the crystal is in state j.

In Figs. 12 we give the results of pseudopotential calculations for Group TV elemental, III-V compound, and II-VI compound semiconductors. Observed Band structures 17 FIG. 10. Band structures for (a) silicon, (b) germanium, and (c) a-tin. In the case of silicon two results are presented: the non-local pseudopotential (solid curve) and the local pseudopotential (dotted curve). ) 18 Band structure of semiconductors FIG. 11. Band structures of III-IV compounds: (a) GaP; (b) GaAs; (c) GaSb; (d) InP; (e) InAs; (f) InSb.

14. Alloys When alloys of two semiconducting compounds AB and CD are made with the formula (AB)x(CD)1_x one might expect that the band structure 42 Band structure of semiconductors of the alloy could be deduced by linear extrapolation from the band structures of the pure compounds, but in fact this turns out to be a poor approximation. A band gap Eg is generally observed to have the form where c is the non-linear coefficient which is usually called the bowing parameter. The latter is significant and cannot be neglected.

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