By Annie Baudrant
Content material:
Chapter 1 Silicon and Silicon Carbide Oxidation (pages 1–101): Jean?Jacques Ganem and Isabelle Trimaille
Chapter 2 Ion Implantation (pages 103–153): Jean?Jacques Grob
Chapter three Dopant Diffusion: Modeling and Technological demanding situations (pages 155–207): Daniel Mathiot
Chapter four Epitaxy of Strained Si/Si1?x Gex Heterostructures (pages 209–331): Jean?Michel Hartmann
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5. 4%) contained in organic solvents used for anodic oxidation were the main oxygen source for the oxide growth [CRO 71a]. In the Croset et al. e. H218O). e. approximately 90 nm of oxide thickness. 4% of H216O for voltages from 180 to 300 V (108 to 180 nm). 20 represents the profiles of 18O obtained by SIMS (secondary ion mass spectroscopy) for various phases of the second stage of oxidation. We clearly see that the sequence 18O/16O is preserved, but a mixture 16/18 appears, and a loss of 18 O is highlighted.
4. Conclusions on the atomic transport mechanisms during silicon thermal oxidation In all the cases exposed here, oxygen is identified as the mobile species. For this reason, the choice of oxygen as an isotopic label should be the most suitable. 5. 4%) contained in organic solvents used for anodic oxidation were the main oxygen source for the oxide growth [CRO 71a]. In the Croset et al. e. H218O). e. approximately 90 nm of oxide thickness. 4% of H216O for voltages from 180 to 300 V (108 to 180 nm).
Some important parameters of silica glass (according to Bruckner [BRU 70]) The porosity and the transparency of the structure are two of the most important physical characteristics of silica films. We can quantify them by using mass density values. However, for thin films this is not easily directly measurable, contrary to the refraction index. Two equations connect the density ρ, with the refraction index n, of an environment. 13) are based on the hypothesis that the basic material remains identical in its atomic structure, but with different porosities and optical transparency.